Northrop Grumman Cryogenic Electronics Publication

Appl. Phys. Lett. (July, 1996).

High-Tc SNS Edge Junctions and SQUIDs with Integrated Groundplanes

B. D. Hunt, M. G. Forrester, J. Talvacchio, J. D. McCambridge, and R. M. Young,

Abstract - Epitaxial high-Tc superconductor / normal-metal / superconductor (SNS) edge-geometry weak links and superconducting quantum interference devices (SQUIDs) have been fabricated with integrated YBCO ground planes and SrTiO3 insulators, using a process which incorporates six epitaxial layers. The SNS edge junctions were produced using off-axis sputtered films and Co-doped YBCO normal metal interlayers. These devices show excellent performance with typical critical current-resistance (IcRn) products of 500-600 microvolts for 100-150 angstrom thick normal metal layers at 65K, and 1-sigma critical current density (Jc) spreads as small as 12%. SNS SQUIDs incorporating groundplanes exhibit voltage modulation of up to 130 microvolts at 65K and 40 microvolts at 77K. SQUID inductance measurements indicate microstrip inductance values of 1 pH per square at 65K.


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