Compound Semiconductor Research

Compund Semiconductor Research concentrates on developing semiconductor devices, materials and fabrication processes for world class radar, electronic countermeasures, and electronic support measures. Innovations in gallium arsenide, indium phosphide, silicon carbide, and silicon germanium provide discriminating technologies for the Northrop Grumman Electronic Systems sector business. The emphasis is on innovations that improve system power and efficiency while minimizing the cost and weight.

Silicon carbide electronics develops unique, high power microwave, temperature-tolerant, and radiation-hard electronics based on the wide band-gap semiconductors silicon carbide and gallium nitride. The focus is on demonstrating high quality crystal substrates, uniform large area epitaxial layers, advanced device designs and fabrication processes, and making custom devices. Major applications include surveillance and tactical radar, low-cost communications transmitters, power devices for electric vehicles and aircraft, rad-hard nuclear and satellite instrumentation, and low power nonvolatile memories.

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